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MFG:TI  Package Cooled:SOT  D/C:07+  

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Part Number: 74AHC1G08

 

MFG: TI

Package Cooled: SOT

D/C: 07+

Description: The 74AHC1G/AHCT1G08 is a high-speed Si-gate CMOS device.The 74AHC1G/AHCT1G08 provides the 2-i...


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74AHC1G08 General Description


The 74AHC1G/AHCT1G08 is a high-speed Si-gate CMOS device.

The 74AHC1G/AHCT1G08 provides the 2-input AND function.

74AHC1G08 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCC DC supply voltage     +7.0 V
VI supply voltage   -0.5 +7.0 V
IIK input diode current VI < -0.5 V -0.5 -20 mA
ISK switch diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1 - ±20 mA
IS switch source or sink current -0.5 V < VO < VCC + 0.5 V - ±25 mA
ICC, IGND VCC or GND current   - ±75 mA
Tstg storage temperature   -65 +150 °C
PD power dissipation per package for temperature range: -40 to +125 °C - 250 mW

Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

74AHC1G08 Features

` Symmetrical output impedance
` High noise immunity
` ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
` Low power dissipation
` Balanced propagation delays
` Very small 5-pin package
` Output capability: standard
` Specified from -40 to +125 °C.

74AHC1G08 Connection Diagram

74AHC1G08 Connection Diagram

74AHC1G08 datasheet

74AHC1G08
PDF/DataSheet Download

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