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Description: The 74AHC3G04/74AHCT3G04 are high-speed Si-gate CMOS devices.The 74AHC3G04/74AHCT3G04 provides...


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74AHC3G04 General Description


The 74AHC3G04/74AHCT3G04 are high-speed Si-gate CMOS devices.

The 74AHC3G04/74AHCT3G04 provides three inverting buffer.

74AHC3G04 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage   −0.5 +7.0 V
VI input voltage   −0.5 +7.0 V
IIK input diode current VI < −0.5 V -20 mA
IOK output diode current −0.5 V < VO <VCC + 0.5 V; note 1 ±20 mA
IO output source or sink current −0.5V<VO <VCC + 0.5 V; note 1 ±25 mA
ICC,IGND VCC or GND current   ±75 mA
Tstg storage temperature   −65 +150
PD power dissipation Tamb = −40 to +125 250 mW

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

74AHC3G04 Features

• Symmetrical output impedance
• High noise immunity
• ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
  CDM EIA/JESD22-C101 exceeds 1000 V.
• Low power dissipation
• Balanced propagation delays
• SOT505-2 and SOT765-1 package
• Specified from −40 to +85 and −40 to +125 .

74AHC3G04 Connection Diagram

74AHC3G04  Connection Diagram

74AHC3G04 datasheet

74AHC3G04
PDF/DataSheet Download

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