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Part Number: 74AHCT2G241

 

 

 

 

Description: The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device.The 74AHC2G241; 74AHCT2G241 is a dual non-inver...


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74AHCT2G241 General Description


The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device.

The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level at pin 2OE causes output 2Y to assume a high-impedance OFF-state. Schmitt-trigger action at all inputs makes the circuit highly tolerant for slower input rise and fall times.

74AHCT2G241 Maximum Ratings

Symbol Parameter Conditions
Min Max Unit
VCC supply voltage   -0.5 +7.0 V
VI input voltage
-0.5 +7.0 V
IIK input diode current VI< -0.5 V - -20 mA
IOK output diode current VO> -0.5V or VO> VCC +0.5 V[1] - ±20 mA
IO output source or sink current VO = -0.5 V to (VCC + 0.5 V) - ±25 mA
ICC, IGND VCC or GND current   - ±75 mA
Tstg storage temperature   -65 +150 °C
Ptot power dissipation Tamb = -40 °C to +125 °C - 250 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

74AHCT2G241 Features

Symmetrical output impedance
High noise immunity
ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
  CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
SOT505-2 and SOT765-1 package
Specified from -40 °C to +85 °C and from -40 °C to +125 °C.

74AHCT2G241 Connection Diagram

74AHCT2G241 Connection Diagram

74AHCT2G241 datasheet

74AHCT2G241
PDF/DataSheet Download

  • Datasheet: 74AHCT2G241
  • File Size: 107692 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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