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Part Number: 74F219A

 

 

 

 

Description: The 74F219A is a high speed, 64bit RAM organized as a 16word by 4bit array. Address inputs are buffere...


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74F219A General Description


The 74F219A is a high speed, 64bit RAM organized as a 16word by 4bit array. Address inputs are buffered to minimize loading and are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE = high) and the output data is the complement of the stored data.

74F219A Maximum Ratings

(Operation beyond the limits set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)
SYMBOL PARAMETER RATING UNIT
VCC Supply voltage 0.5 to +7.0 V
VIN Input voltage 0.5 to +7.0 V
IIN Input current 30 to +5 mA
VOUT Voltage applied to output in High output state 0.5 to VCC V
IOUT Current applied to output in Low output state 48 mA
Tamb Operating free-air temperature range 0 to +70 °C
Tstg Storage temperature range 65 to +150 °C

74F219A Features

• High speed performance
• Replaces 74F219
• Address access time: 8ns max vs 28ns for 74F219
• Power dissipation: 4.3mW/bit typ
• Schottky clamp TTL
• One chip enable
• NonInverting outputs (for inverting outputs see 74F189A)
• 3state outputs
• 74F219A in 150 mil wide SO is preferred options for new designs
• C3F219A in 300 mil wide SOL replaces 74F219 in existing designs

74F219A Typical Application

• Scratch pad memory
• Buffer memory
• Push down stacks
• Control store

74F219A Connection Diagram

74F219A  Connection Diagram

74F219A datasheet

74F219A
PDF/DataSheet Download

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