Purchase 74HC1G125, In-stock 74HC1G125 From SeekIC.


Part Number: 74HC1G125
Description: The 74HC1G/HCT1G125 is a high-speed Si-gate CMOS device.The 74HC1G/HCT1G125 provides one non-i...


Description: The 74HC1G/HCT1G125 is a high-speed Si-gate CMOS device.The 74HC1G/HCT1G125 provides one non-i...
The 74HC1G/HCT1G125 is a high-speed Si-gate CMOS device.
The 74HC1G/HCT1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A HIGH at pin OE causes the output as assume a high-impedance OFF-state.
The bus driver output currents are equal compared to the 74HC/HCT125.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCC | supply voltage |
-0.5 |
+7.0 |
V | |
| IIK | input diode current | VI < -0.5 V or VI > VCC + 0.5 V; note 1 |
- |
±20 |
mA |
| IOK | output diode current | VO < -0.5 V or VO > VCC + 0.5 V; note 1 |
- |
±20 |
mA |
| IO | output source or sink current | -0.5 V < VO < VCC + 0.5 V; note 1 |
- |
±12.5 |
mA |
| ICC | VCC or GND current | note 1 |
- |
±25 |
mA |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| PD | power dissipation per package | for temperature range from -40 to +125 °C; note 2 |
- |
200 |
mW |
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
74HC1G125
PDF/DataSheet Download








