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Part Number: 74HC1G126
Description: The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device.The 74HC1G/HCT1G126 provides one non-in...


Description: The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device.The 74HC1G/HCT1G126 provides one non-in...
The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device.
The 74HC1G/HCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output as assume a high-impedance OFF-state.
The bus driver output currents are equal compared to the 74HC/HCT126.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCC | supply voltage |
-0.5 |
+7.0 |
V | |
| IIK | input diode current | VI < -0.5 V or VI > VCC + 0.5 V; |
- |
±20 |
mA |
| IOK | output diode current | VO < -0.5 V or VO > VCC + 0.5 V; |
- |
±20 |
mA |
| IO | output source or sink current | -0.5 V < VO < VCC + 0.5 V; |
- |
±35.0 |
mA |
| ICC | VCC or GND current | note 1 |
- |
±70 |
mA |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| PD | power dissipation per package | for temperature range from -40 to +125 °C; note 3 |
- |
200 |
mW |
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under 'recommended operating conditions' is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
74HC1G126
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