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Description: The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device.The 74HC1G/HCT1G126 provides one non-in...


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74HC1G126 General Description


The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device.

The 74HC1G/HCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output as assume a high-impedance OFF-state.

The bus driver output currents are equal compared to the 74HC/HCT126.

74HC1G126 Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC supply voltage  
-0.5
+7.0
V
IIK input diode current VI < -0.5 V or VI > VCC + 0.5 V;
-
±20
mA
IOK output diode current VO < -0.5 V or VO > VCC + 0.5 V;
-
±20
mA
IO output source or sink current -0.5 V < VO < VCC + 0.5 V;
-
±35.0
mA
ICC VCC or GND current note 1
-
±70
mA
Tstg storage temperature  
-65
+150
°C
PD power dissipation per package for temperature range from -40 to +125 °C;
note 3
-
200
mW


Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under 'recommended operating conditions' is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55 °C the value of PD derates linearly with 2.5 mW/K.

74HC1G126 Features

· Wide operating voltage from 2.0 to 6.0 V
· Symmetrical output impedance
· High noise immunity
· Low power dissipation
· Balanced propagation delays
· Very small 5 pins package
· Output capability: bus driver.

74HC1G126 Connection Diagram

74HC1G126  Connection Diagram

74HC1G126 datasheet

74HC1G126
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