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Part Number: 74HC3G07
Description: The 74HC3G/HCT3G07 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no...


Description: The 74HC3G/HCT3G07 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no...
The 74HC3G/HCT3G07 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A.
The 74HC3G/HCT3G07 provides three non-inverting buffers.
The outputs of the 74HC3G/HCT3G07 devices are open drains and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this devicemust have a pull-up resistor to establish a logic HIGH-level.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCC | supply voltage | −0.5 | +7.0 | V | |
| IIK | input diode current | VI < −0.5 V or VI >VCC + 0.5 V | − | ±20 | mA |
| IOK | output diode current | VO < −0.5 V | − | -20 | mA |
| VO | output voltage | active mode; note 1 | −0.5 | VCC + 0.5 | V |
| high-impedance mode; note 1 | −0.5 | 7.0 | V | ||
| IO | output source or sink current | −0.5 V < VO < 7.0 V | − | -25 | mA |
| ICC | VCC or GND current | note 1 | − | 50 | mA |
| Tstg | storage temperature | −65 | +150 | ||
| PD | power dissipation | Tamb = −40 to +125 ; note 2 | − | 300 | mW |
74HC3G07
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