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Part Number: 74HCT7273

 

 

 

 

Description: The 74HCT7273 is a high-speed SI-gate CMOS device and is pin compatible with Low power Schottky TTL (LSTTL). It is s...


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74HCT7273 General Description


The 74HCT7273 is a high-speed SI-gate CMOS device and is pin compatible with Low power Schottky TTL (LSTTL). It is specified in compliance with
JEDEC standard no 7A.

The 74HCT7273 has eight edge-triggered D-type flip-flops with individual Dinputs and Q outputs. The common Clock (CP) and Master Reset (,MR) inputs
load and reset (clear) all flip-flops simultaneously.

The state of each D input, one set-up time before the LOW-to-HIGH clock transition, is transferred to the corresponding output (Qn) of the flip-flop.

A LOW level on the ,MR input forces all outputs LOW, independently of the clock or data inputs.

The device is useful for applications requiring true outputs only and clock and master reset inputs that are common to all storage elements.

The 74HCT7273 has open-drain N-outputs, which are clamped by a diode connected to VCC. When a HIGH is clocked in the flip-flop, the output comes in the high-impedance OFF-state. The output may now be pulled to any voltage between GND and VOmax. This allows the device to be used as a LOW-to-HIGH or HIGH-to-LOW level shifter. For digital operation and OR-tied output applications, the device must have a pull-up resistor to establish a logic HIGH level.

74HCT7273 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCC

DC supply voltage   −0.5 +7.0 V
VO
output voltage
  −0.5 +7.0 V
IIK DC input diode current VI<−0.5VorVI>VCC+0.5V
20 mA
IOK DC output diode current VO<−0.5VorVO>VCC+0.5V
±20 mA
IO DC output source or sink current −0.5V<VO<VCC+0.5V 25 mA
ICC
DC VCCor GND current
  ±50 mA
Tstg storage temperature   −65
+150 °C
PD power dissipation per package
    plastic DIP
    plastic mini-pack (SO)
for temperature range:−40to+125°C
note 1
note 2

 





750
500

mW
mW

 

Note
1.For DIP package: above 70°C the value of PDderates linearly with 12mW/K.
2.For SO package: above 70°C the value of PDderates linearly with 8mW/K.

74HCT7273 Features

• ESD protection:
   HBM EIA/JESD22-A114-A
   Exceeds 2000 V
   MM EIA/JESD22-A115-A
   Exceeds 200 V
• Ideal buffer for MOS
   microprocessor or memory
• Eight positive edge-triggered
   D-type flip-flops
• Common clock and master reset
• Output capability: standard (open
   drain)
• ICC category: MSI.

74HCT7273 Connection Diagram

74HCT7273  Connection Diagram

74HCT7273 datasheet

74HCT7273
PDF/DataSheet Download

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