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Part Number: 74LVC1G126
Description: The 74LVC1G126 is a high-performance, low-power,low-voltage, Si-gate CMOS device, superior to most


Description: The 74LVC1G126 is a high-performance, low-power,low-voltage, Si-gate CMOS device, superior to most
The 74LVC1G126 is a high-performance, low-power,low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
The input can be driven from either 3.3 V or 5 V devices.This feature allows the use of this device in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output,preventing the damaging backflow current through the device when it is powered down.
The 74LVC1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A low level at pin OE causes the output to assume a high-impedance OFF-state.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCC | supply voltage | -0.5 | +6.5 | V | |
| IIK | input diode current | VI < 0 | - | -50 | mA |
| VI | input voltage | -0.5 | +6.5 | V | |
| IOK | output diode current VO > VCC or VO < 0 | - | ±50 | mA | |
| VO | output voltage | enable mode; notes 1 and 2 | -0.5 | VCC + 0.5 | V |
| disable mode | -0.5 | +6.5 | V | ||
| Power-down mode; note 2 | -0.5 | +6.5 | V | ||
| IO | output source or sink current | VO = 0 to VCC | - | ±50 | mA |
| ICC, IGND | VCC or GND current | - | ±100 | mA | |
| Tstg | storage temperature | -65 | +150 | ||
| Ptot | power dissipation | Tamb = -40 to +125 | - | 250 | mW |
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
74LVC1G126
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