Purchase 74LVC1G80, In-stock 74LVC1G80 From SeekIC.
Part Number: 74LVC1G80
Description: The 74LVC1G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most adv...
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74LVC1G80
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DataSheet
General Description
74LVC1G80 General Description
The 74LVC1G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
The 74LVC1G80 provides a single positive-edge triggered D-type flip-flop.
Information on the data input is transferred to the Q output pin on the LOW-to-HIGH transition of the clock pulse.
The input pin D must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation.
74LVC1G80 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCC | supply voltage | -0.5 | +6.5 | V | |
| IIK | input diode current | VI < 0 V | - | -50 | mA |
| VI | input voltage | note 1 | -0.5 | +6.5 | V |
| IOK | output diode current | VO > VCC or VO < 0 V | - | ±50 | mA |
| VO | output voltage | active mode; note 1 |
-0.5 | VCC + 0.5 | V |
| Power-down mode; note 1 | -0.5 | +6.5 | V | ||
| IO | output source or sink current | VO = 0 V to VCC | - | ±50 | mA |
| ICC, IGND | VCC or GND current | - | ±100 | mA | |
| Tstg | storage temperature | -65 | +150 | °C | |
| Ptot |
power dissipation | Tamb = -40 °C to +125 °C | - | 250 | mW |
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
74LVC1G80 Features
` Wide supply voltage range from 1.65 V to 5.5 V
` High noise immunity
` Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V).
` ±24 mA output drive (VCC = 3.0 V)
` ESD protection:
HBM EIA/JESD22-A114-B exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
` CMOS low power consumption
` Latch-up performance exceeds 250 mA
` Direct interface with TTL levels
` Inputs accept voltages up to 5 V
` Multiple package options
` Specified from -40 °C to +85 °C and -40 °C to +125 °C.
` High noise immunity
` Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V).
` ±24 mA output drive (VCC = 3.0 V)
` ESD protection:
HBM EIA/JESD22-A114-B exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
` CMOS low power consumption
` Latch-up performance exceeds 250 mA
` Direct interface with TTL levels
` Inputs accept voltages up to 5 V
` Multiple package options
` Specified from -40 °C to +85 °C and -40 °C to +125 °C.
74LVC1G80 Connection Diagram
74LVC1G80
PDF/DataSheet Download
- Datasheet: 74LVC1G80
- File Size: 101821 KB
- Manufacturer: PANASONIC [Panasonic Semiconductor]
- Click here to Download
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