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Part Number: 74LX1G7
Description: The 74LX1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and ...


Description: The 74LX1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and ...
The 74LX1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
It is ideal for 1.65 to 5.5 VCC operations and low power and low noise applications. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
Power down protection is provided on input and output and 0 to 7V can be accepted on inputs with no regard to the supply voltage. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. All inputs and outputs are equipped with protection circuits against static discharge.
|
Symbol |
Parameter² |
Value |
Unit |
|
VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
|
VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
|
VO |
DC Output Voltage (VCC = 0V) |
-0.5 to +7.0 |
V |
|
VO |
DC Output Voltage (High or Low State) (note 1) |
-0.5 to VCC + 0.5 |
V |
|
IIK |
DC Input Diode Current |
-50 |
mA |
|
IOK |
DC Output Diode Current (note 2) |
-50 |
mA |
|
IO |
DC Output Current |
± 50 |
mA |
|
ICC or IGND |
DC VCC or Ground Current per Supply Pin |
± 50 |
mA |
|
Tstg |
Storage Temperature |
-65 to +150 |
|
|
TL |
Lead Temperature (10 sec) |
300 |
Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition is not implied
1) IO absolute maximum rating must be observed
2) VO < GND, VO > VCC
74LX1G70
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