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Part Number: 74V1G07

 

 

 

 

Description: The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-laye...


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74V1G07 General Description


   The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

   The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.

  Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to
interface 5V to 3V.

74V1G07 Maximum Ratings

Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7.0 V
VI DC Input Voltage -0.5 to +7.0 V
VO DC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current - 20 mA
IOK DC Output Diode Current ± 20 mA
IO DC Output Current ± 25 mA
ICC or IGND DC VCC or Ground Current ± 50 mA
Tstg Storage Temperature -65 to +150 oC
TL Lead Temperature (10 sec) 260 oC

74V1G07 Features

 HIGHSPEED: tPD = 6.1 ns (TYP.) atVCC= 5V
LOWPOWERDISSIPATION:ICC =1 mA (MAX.) at TA =25 oC
HIGHNOISEIMMUNITY:VNIH=VNIL =28%VCC (MIN.)
POWERDOWN PROTECTIONON INPUT
OPERATINGVOLTAGERANGE:VCC (OPR)= 2V to 5.5V
IMPROVEDLATCH-UP IMMUNITY

74V1G07 Connection Diagram

74V1G07  Connection Diagram

74V1G07 datasheet

74V1G07
PDF/DataSheet Download

  • Datasheet: 74V1G07
  • File Size: 49550 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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