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Description: Maxwell Technologies' 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose toler...


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79LV2040 General Description


Maxwell Technologies' 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose toler-ance, dependent upon orbit. Using Maxwell Technologies' pat-ented radiation-hardened RAD-PAK® MCM packaging technology, the 79LV2040 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79LV2040 uses twenty 1 Megabit high speed CMOS die to yield a 20 megabit product. The 79LV2040 is capable of in-system elec-trical byte and page programmability. It has a 128 x 40 page programming function to make the erase and write operations faster. It also features Data</a> Polling and a Ready/Busy</a> signal to indicate the completion of erase and programming operations.In the 79LV2040, hardware data protection is provided with the RES</a> pin, in addition to noise protection on the WE</a> signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented RAD-PAK® packaging technol-ogy incorporates radiation shielding in the microcircuit pack-age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K

79LV2040 Maximum Ratings

PARAMETER SYMBOL MIN TYP MAX UNIT
Supply Voltage VCC -0.6   7.0 V
Input Voltage VIN -0.51   7.0 V
Package Weight RSP 35 Grams
Operating Temperature Range TOPR -55   125 °C
Storage Temperature Range TSTG -65   150 °C

79LV2040 Features

•512k x 40-bit EEPROM MCM
•RAD-PAK® radiation-hardened against natural
•space radiation
•Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
•Excellent Single event effects
- SELTH> 84 MeV/mg/cm2
- SEU > 37 MeV/mg/cm2 read mode
- SEU = 11.4 MeV/mg/cm2 write mode
•High endurance
- 10,000 cycles (Page Programming Mode)
- 10 year data retention
•Page Write Mode: 128 Dword Page
•High Speed:
- 200 and 250 ns maximum access times
•Automatic programming
- 15 ms automatic Page/Dword write
•Low power dissipation
- 100 mW/MHz active current
- 1.5 mW standby current

79LV2040 Connection Diagram

79LV2040  Connection Diagram

79LV2040 datasheet

79LV2040
PDF/DataSheet Download

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