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MFG:APEC D/C:02+
Part Number: 7N70
MFG: APEC
D/C: 02+
Description: The UTC 7N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low ga...
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7N70
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DataSheet
General Description
7N70 General Description
The UTC 7N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
7N70 Maximum Ratings
| Parameter |
Symbol |
Rating |
Unit | |
| Drain-Source Voltage |
VDSS |
700 |
V | |
| Gate-Source Voltage |
VGSS |
±30 |
V | |
| Continuous Drain Current | TC = 25 |
ID |
7.0 |
A |
| TC = 100 |
4.7 |
A | ||
| Drain Current Pulsed (Note 1) |
IDM |
28 |
A | |
| Avalanche Energy, Single Pulsed (Note 2) |
EAS |
530 |
mJ | |
| Avalanche Energy, Repetitive, Limited by TJMAX |
EAR |
14.2 |
mJ | |
| k Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | |
| Power Dissipation (TC = 25) |
PD |
142 |
W | |
| Operating Junction and Storage Temperature Range |
Tj |
+150 |
||
| Maximum Junction-to-Ambient* |
TSTG |
-55 ~ +150 |
/W | |
7N70 Features
* RDS(ON) = 1.5 @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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