89LV1632

Four 512k x 8 SRAM die
R_AD-P_AK® technology hardens against natural space radiation technology
Total dose hardness:
- > 100 krad (Si), depending upon space mission
Excellent Single Event Effects:
- SEL > 101MeV-cm²/mg
- SEU threshold = 3 MeV-cm²/mg
- SEU saturated cross section: 8E-9 cm²/bit
Package: 68-pin quad flat package
Completely static memory - no clock or timing strobe required
Internal bypass capacitor
High-speed silicon-gate CMOS technology
3.3 V ± 10% power supply
Equal address and chip enable access times
Three-state outputs
All inputs and outputs are TTL compatible

Maxwell Technologies' 89LV1632 high-performance 16 Megabit Multi-Chip Module (MCM) Static Random Access Memory features a greater than 100 krad(Si) total dose tolerance, depending upon space mission. The four 4-Megabit SRAM die and bypass capacitors are incorporated into a high-reliable hermetic quad flat-pack ceramic package. With high-performance silicon-gate CMOS technology, the 89LV1632 reduces power consumption and eliminates the need for external clocks or timing strobes. 89LV1632 is equipped with output enable (OE) and four byte chip enable (CS1 - CS4) inputs to allow greater system flexibility. When OE input is high, the output is forced to high impedance.

Maxwell Technologies' 89LV1632 patented RAD-PAK^® packaging technology incorporates radiation shielding in the microcircuit package. In a GEO orbit, RAD-PAK^® packaging provides greater than 100 krad(Si) total radiation dose tolerance, dependent upon space mission. 89LV1632 eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or a space mission. This product is available in with screening up to Maxwell Technologies self-defined Class K.