93LC66B

• Single supply with operation down to 2.5V
• Low power CMOS technology
- 1 mA active current (typical)
- 1uA standby current (maximum)
• 512 x 8 bit organization (93LC66A)
• 256 x 16 bit organization (93LC66B)
• Self-timed ERASE and WRITE cycles(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial interface
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 1,000,000 E/W cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP/SOIC and 8-pin TSSOP packages
• Available for the following temperature ranges:
- Commercial (C): 0 to +70
- Industrial (I): -40to +85

Vcc ...................................................................................7.0V
All inputs and outputs w.r.t. Vss ............... -0.6V to Vcc +1.0V
Storage temperature .....................................-65 to +150
Ambient temp. with power applied.................-65 to +125
Soldering temperature of leads (10 seconds) .............+300
ESD protection on all pins................................................4 kV

The Microchip Technology Inc. 93LC66A/B are 4K-bit,low voltage serial Electrically Erasable PROMs. Thedevice memory is configured as x8 (93LC66A) orx16 bits (93LC66B). Advanced CMOS technologymakes these devices ideal for low power nonvolatilememory applications. The 93LC66A/B is available instandard 8-pin DIP, surface mount SOIC, and TSSOPpackages. The 93LC66AX/BX are only offered in a 150-mil SOIC package.