9N90

Features: * RDS(ON) = 1.4 @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 14 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL SYMBOL UNIT Drain-S...

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SeekIC No. : 004259637 Detail

9N90: Features: * RDS(ON) = 1.4 @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 14 pF )* Fast switching capability* Avalanche energy specified* Impr...

floor Price/Ceiling Price

Part Number:
9N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

* RDS(ON) = 1.4 @VGS = 10 V
* Ultra low gate charge ( typical 45 nC )
* Low reverse transfer capacitance ( CRSS = typical 14 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness




Specifications

PARAMETER SYMBOL SYMBOL UNIT
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
900

±30
V

V
Continuous Drain Current (TC = 25)

Pulsed Drain Current (Note 1)

Avalanche Current (Note 1)
ID

IDM

IAR
9.0

36

9.0
A

A

A
Avalanche Energy Single Pulsed(Note 2)

Repetitive(Note 1)
EAS

EAR
900

28
mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns
Power Dissipation

Derate above 25
PD 280

2.22
W

W/
Junction Temperature

Operating Temperature

Storage Temperature
TJ

TOPR

TSTG
125

-20 ~ +85

-40 ~ +150





Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 9N90 uses UTC's advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. UTC 9N90 is suitable for use as a load switch or in PWM applications.




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