Features: * RDS(ON) = 1.4 @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 14 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL SYMBOL UNIT Drain-S...
9N90: Features: * RDS(ON) = 1.4 @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 14 pF )* Fast switching capability* Avalanche energy specified* Impr...
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* RDS(ON) = 1.4 @VGS = 10 V
* Ultra low gate charge ( typical 45 nC )
* Low reverse transfer capacitance ( CRSS = typical 14 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
PARAMETER | SYMBOL | SYMBOL | UNIT | |
Drain-Source Voltage Gate-Source Voltage |
VDSS VGSS |
900 ±30 |
V V | |
Continuous Drain Current (TC = 25) Pulsed Drain Current (Note 1) Avalanche Current (Note 1) |
ID IDM IAR |
9.0 36 9.0 |
A A A | |
Avalanche Energy | Single Pulsed(Note 2) Repetitive(Note 1) |
EAS EAR |
900 28 |
mJ |
Peak Diode Recovery dv/dt (Note 3) | dv/dt | 4.0 | V/ns | |
Power Dissipation Derate above 25 |
PD | 280 2.22 |
W W/ | |
Junction Temperature Operating Temperature Storage Temperature |
TJ TOPR TSTG |
125 -20 ~ +85 -40 ~ +150 |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
The UTC 9N90 uses UTC's advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. UTC 9N90 is suitable for use as a load switch or in PWM applications.