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A25L20P

Features: ` 2Mbit / 1Mbit / 512Kbit of Flash Memory` Flexible Sector Architecture- 25L20P: (4/4/8/16/32)KB/64x3 KB- 25L10P: (4/4/8/16/32)KB/64x1KB- 25L05P: (4/4/8/16/32)KB` Bulk Erase (typical)- 25L20P (2M) in 6s- A25L10P (1M) in 4s- A25L05P (512K) in 3s` Sector Erase (512 Kbit) in 1s (typical...

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SeekIC No. : 004259993 Detail

A25L20P: Features: ` 2Mbit / 1Mbit / 512Kbit of Flash Memory` Flexible Sector Architecture- 25L20P: (4/4/8/16/32)KB/64x3 KB- 25L10P: (4/4/8/16/32)KB/64x1KB- 25L05P: (4/4/8/16/32)KB` Bulk Erase (typical)- ...

A25L20P Data Sheet

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Part Number:
A25L20P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` 2Mbit / 1Mbit / 512Kbit of Flash Memory
` Flexible Sector Architecture
- 25L20P: (4/4/8/16/32)KB/64x3 KB
- 25L10P: (4/4/8/16/32)KB/64x1KB
- 25L05P: (4/4/8/16/32)KB
` Bulk Erase (typical)
- 25L20P (2M) in 6s
- A25L10P (1M) in 4s
- A25L05P (512K) in 3s
` Sector Erase (512 Kbit) in 1s (typical)
` Page Program (up to 256 Bytes) in 3ms (typical)
` 2.7 to 3.6V Single Supply Voltage
` SPI Bus Compatible Serial Interface
` 85MHz Clock Rate (maximum)
` Deep Power-down Mode 1A (typical)
` Top or Bottom boot block configuration available
` Electronic Signatures
- JEDEC Standard Two-Byte Signature
  A25L20P: (2012h, Bottom) or (2022h, top)
  A25L10P: (2011h, Bottom) or (2021h, top)
  A25L05P: (2010h, Bottom) or (2020h, top)
- RES Instruction, One-Byte, Signature, for backward compatibility
  A25L20P (11h)
  A25L10P (10h)
  A25L05P (05h)
` Package options
- 8-pin SOP (150mil or 209mil), 8-pin DIP (300mil) or 8-pin QFN
- All Pb-free (Lead-free) products are RoHS compliant


Pinout

Connection Diagram


Specifications

Storage Temperature (TSTG) . . . . . . . . . . -65°C to + 150°C
Lead Temperature during Soldering (Note 1)
D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to VCC+0.6V
Transient Voltage (<20ns) on Any Pin to Ground Potential .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VCC+2.0V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . -0.6V to +4.0V
Electrostatic Discharge Voltage (Human Body model)
(VESD) (Note 2) . . . . . . . . . . . . . . . . . . . -2000V to 2000V
Notes:
1. Compliant with JEDEC Std J-STD-020B (for small body,
Sn-Pb or Pb assembly).
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500,
R2=500)


Description

The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.

The memory of A25L20P/A25L10P/A25L05P can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The memory of A25L20P/A25L10P/A25L05P is organized as 4/2/1 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024/512/256 pages, or 262,144 /131,072/65,536 bytes.

The whole memory of A25L20P/A25L10P/A25L05P can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.




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