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Part Number: A25L80P

 

 

 

 

Description: The A25L80P is an 8 Mbit (1M x 8) Serial Flash Memory, with advanced write protection mechanisms, acce...


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A25L80P General Description


The A25L80P is an 8 Mbit (1M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1,048,576 bytes.

The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.

A25L80P Maximum Ratings

Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . .-65°C to + 150°C
Lead Temperature during Soldering (Note 1)
Input and Output Voltage (with respect to Ground) (VID) . . -0.6V to +4.0V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .-0.6V to +4.0V
Electrostatic Discharge Voltage (Human Body model) (VESD)
(Note 2)    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..  -2000V to 2000V

Notes:
1. Compliant with JEDEC Std J-STD-020B (for small body,  Sn-Pb or Pb assembly).
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500, R2=500)

A25L80P Features

 8 Mbit of Flash Memory   
Flexible Sector Architecture (4/4/8/16/32)KB/64x15 KB 
Bulk Erase (8 Mbit) in 10s (typical)   
Sector Erase (512 Kbit) in 1s (typical) 
Page Program (up to 256 Bytes) in 3ms (typical)   
2.7 to 3.6V Single Supply Voltage   
SPI Bus Compatible Serial Interface   
50MHz Clock Rate (maximum)   
Deep Power-down Mode 1µA (typical)   
Electronic Signature   - JEDEC Standard (13h)

A25L80P datasheet

A25L80P
PDF/DataSheet Download

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