A29400

Features:

 5.0V ± 10% for read and write operations
Access times: 
    - 55/70/90 (max.)
 Current:
    - 20 mA typical active read current
    - 30 mA typical program/erase current 
    - 1 mA typical CMOS standby 
  Flexible sector architecture
    - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX7 sectors
    - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX7 sectors
    - Any combination of sectors can be erased
    - Supports full chip erase
    - Sector protection:
    A hardware method of protecting sectors to prevent  any inadvertent program or erase operations within that sector
  Top or bottom boot block configurations available
Embedded Erase Algorithms
    - Embedded Erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors
    - Embedded Program algorithm automatically writes and verifies bytes at specified addresses
Typical 100,000 program/erase cycles per sector 
20-year data retention at 125°C
    - Reliable operation for the life of the system
  Compatible with JEDEC-standards
    - Pinout and software compatible with single-power-supply Flash memory standard
    - Superior inadvertent write protection
  DataPolling and toggle bits
    - Provides a software method of detecting completion of program or erase operations
Erase Suspend/Erase Resume
    -  Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation
  Hardware reset pin (RESET)
    - Hardware method to reset the device to reading array data
  Package options
    - 44-pin SOP or 48-pin TSOP (I) 
  


Pinout




Specifications

Ambient Operating Temperature . . . .    . . -55°C to + 125°C
Storage Temperature . . . . . . . . . . . .  . . .  -65°C to + 125°C
Ground to VCC . . . . . . . . . . . . . .  .  . . . . . . . . .  -2.0V to 7.0V
Output Voltage (Note 1) . . . . . . . . .  .  . . . . . . .  -2.0V to 7.0V
A9, OE  & RESET  (Note 2) . . . . . . . .  .  .  . . . .  -2.0V to 12.5V
All other pins (Note 1) . . . . . . . . . . . . .. . . .  .  .  -2.0V to 7.0V
Output Short Circuit Current (Note 3) . . ..  .  . . . . . . .  200mA


Description

The A29400 is a 5.0 volt only Flash memory organized as 524,288 bytes of 8 bits or 262,144 words of 16 bits each. The A29400 offers the RESET  function. The 512 Kbytes of data are further divided into eleven sectors for flexible sector erase capability. The 8 bits of data appear on I/O0  - I/O7 while the addresses are input on A1 to A17; the 16 bits of data appear on I/O0~I/O15. The A29400 is offered in 44-pin SOP and 48-Pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29400 can also be programmed in standard EPROM programmers.  The A29400 has the first toggle bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6  toggle bit, the A29400 has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase.

The A29400 also offers the ability to program in the Erase Suspend mode. The standard A29400 offers access times of 55, 70 and 90 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable ( WE ) and output enable ( OE ) controls.

The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. 

The A29400 is entirely software command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.  Device programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm  - an internal algorithm that automatically times the program pulse widths and verifies proper
program margin. 

Device A29400 erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm  - an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper erase margin.