A29DL324

Features: ` Two bank organization enabling simultaneous execution of erase / program and read ` Bank organization: 2 banks (16 Mbits + 16 Mbits) ` Memory organization: - 4,194,304 words x 8 bits (BYTE mode) - 2,097,152 words x 16 bits (WORD mode) ` Sector organization: 71 sectors (8 Kbytes / 4 ...

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A29DL324 Picture
SeekIC No. : 004260074 Detail

A29DL324: Features: ` Two bank organization enabling simultaneous execution of erase / program and read ` Bank organization: 2 banks (16 Mbits + 16 Mbits) ` Memory organization: - 4,194,304 words x 8 bits (...

floor Price/Ceiling Price

Part Number:
A29DL324
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

`  Two bank organization enabling simultaneous execution of  erase /
     program and read
`  Bank organization: 2 banks (16 Mbits + 16 Mbits)
`  Memory organization: 
     - 4,194,304 words x 8 bits (BYTE mode)
     - 2,097,152 words x 16 bits (WORD mode)
`  Sector organization:   71 sectors (8 Kbytes / 4 Kwords * 8 sectors,
     64 Kbytes /  32 Kwords * 63 sectors) 
`  2 types of sector organization
     - T type: Boot sector allocated to the highest address  (sector) 
     - B type: Boot sector allocated to the lowest address  (sector)  
`  3-state output
`  Automatic program
     - Program suspend / resume
`  Unlock bypass program
`  Automatic erase
     - Chip erase
     - Sector erase (sectors can be combined freely)
`  Erase suspend / resume
`  Program / Erase completion detection
     - Detection through data polling and toggle bits
     - Detection through RY/BY pin
`  Sector group protection
     - Any sector group can be protected
     - Any protected sector group can be temporary  unprotected
`  Sectors can be used for boot application
`  Hardware reset and standby using RESET  pin
`  Automatic sleep mode
`  Boot block sector protect by WP (ACC) pin
`  Conforms to common flash memory interface (CFI)
`  Extra One Time Protect Sector provided
`  Operating ambient temperature: -40 to 85
`  Program / erase time
     - Program: 9.0 µs / byte (TYP.)   11.0 µs / word (TYP.)
     - Sector erase: 0.7 s (TYP.)
`  Number of program / erase: 1,000,000 times (MIN.)
`  Package options
     - 48-pin TSOP (I) or 63-ball TFBGA 
 



Pinout

  Connection Diagram


Specifications

Storage Temperature (Tstg)......................................................... -55 to + 125
Operating Ambient Temperature (TA) .............................................-40to + 85
Input / Output Voltage with Respect to GND 
   WP (ACC), RESET ............................................................. -0.5V Note1 to 13.0V
   All Pins except WP (ACC), RESET .....-0.5V Note1 to VCC + 0.4 (4.0V max.) Note2
Supply Voltage with Respect to GND (VCC).....................................  -0.5V to 4.0V

Notes:
1.  -2.0V (Min.) (Pulse width 20ns)
2.  VCC + 0.5V (Max.) (Pulse width 20ns)



Description

The A29DL324 is a flash memory organized of 33,554,432  bits and 71 sectors. Sectors of this memory can be erased  at a low voltage (2.7 to 3.6 V) supplied from a single power  source, or the contents of the entire chip can be erased.  Two  modes of memory organization, BYTE mode  (4,194,304 words × 8 bits) and WORD mode (2,097,152  words × 16 bits), are selectable so that the memory can be  programmed in byte or word units.

The A29DL324 can be read while its contents are being  erased or programmed. The memory cell is divided into two  banks. While sectors in one bank are being erased or  programmed, data can be read from the other bank thanks  to the simultaneous execution architecture. The banks are  8 Mbits and 24 Mbits.

This flash memory A29DL324 comes in two types. The T type has a  boot sector located at the highest address (sector) and the  B type has a boot sector at the lowest address (sector).  Because the A29DL324 enables the boot sector to be  erased, it is ideal for storing a boot program. In addition,  program code that controls the flash memory can be also  stored, and the program code can be programmed or  erased without the need to load it into RAM. Eight small  sectors for storing parameters are provided, each of which  can be erased in 8 Kbytes units.

Once a program or erase command sequence has been  executed, an automatic program or automatic erase  function internally executes program or erase and  verification automatically.

Because the A29DL324 can be electrically erased or  programmed by writing an  instruction, data can be  reprogrammed on-board after the flash memory has been  installed in a system, making it suitable for a wide range of  applications. 
 




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