A416316BS-35/Q

The A416316BS-35/Q is designed as one kind of high performance CMOS dynamic random access memory that is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.

Features of the A416316BS-35/Q are:(1)Organization: 65,536 words X 16 bits;(2)Single 5V power supply/built-in VBB generator;(3)JEDEC standard packages: 400mil, 40-pin SOJ and 400mil, 40/44 TSOP type II package;(4)TTL-compatible, three-state I/O;(5)Read-modify-write, RAS -only, CAS -before- RAS, Hidden refresh capability;(6)256 refresh cycles, 4 ms refresh interval;(7)Self refresh mode;(8)Separate CAS (UCAS ,LCAS ) for byte selection;(9)Low power consumption: Operating: 75mA (-30 max) and Standby: 3 mA (TTL).

The absolute maximum ratings of the A416316BS-35/Q can be summarized as:(1)Input Voltage (Vin): -1.0 V to +7.0 V;(2)Output Voltage (Vout): -1.0 V to +7.0 V;(3)Power Supply Voltage: -1.0 V to +7.0 V;(4)Operating Temperature: 0 °C to +70 °C;(5)Storage Temperature: -55°C to +150°C;(6)Soldering Temperature X Time: 260°C X 10 sec;(7)Power Dissipation: 1 W;(8)Short Circuit Output Current: 50 mA;(9)Latch-up Current: 200 mA. If you want to know more information such as the electrical characteristics about the A416316BS-35/Q, please download the datasheet in www.seekic.com or www.chinaicmart.com .