A426316B

The A426316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A426316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.
 
The A426316B features a high speed page mode operation in which high speed read, write and read-write are performed on any of the bits defined by the column address. The asynchronous column address uses an extremely short row address capture time to ease the system level timing constraints associated with multiplexed addressing. Output is tri-stated by a column address strobe  ( UCAS and  LCAS ) which acts as an output enable independent of  RAS . Very EDO  UCAS and LCAS   to output access time eases system design.
 
All inputs are TTL compatible. EDO Page Mode operation allows random access up to 256 X 16 bits within a page, with cycle time as short as 12/14/15 ns.
 
The A426316B is best suited for graphics, digital signal processing and high performance peripherals.
 
The A426316B is available in JEDEC standard 40-pin plastic SOJ package and 40/44 TSOP type II package.