Position: Home > Datasheet list > A63 Series > Index A > A63L83361
Electronica China

Purchase A63L83361, In-stock A63L83361 From SeekIC.

 

A63L83361 Product Image

A63 Series Datasheet download

Five Points

Part Number: A63L83361

 

 

 

 

Description: The A63L83361 is a high-speed SRAM containing 9M bits of bit synchronous memory, organized as 256K wor...


Urgent Purchase

A63L83361 General Description


The A63L83361 is a high-speed SRAM containing 9M bits of bit synchronous memory, organized as 256K words by 36 bits.

The A63L83361 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output buffer and a 256K X 36 SRAM core to provide a wide range of data RAM applications.

The positive edge triggered single clock input (CLK) controls all synchronous inputs passing through the registers. Synchronous inputs include all addresses (A0 - A16), all data inputs (I/O1 - I/O36), active LOW chip enable ( CE ), two additional chip enables (CE2, CE2 ), burst control inputs ( ADSCADSP , ADV ), byte write enables ( BWEBW1BW2BW3BW4 ) and Global Write (GW ). Asynchronous inputs include output enable ( OE ), clock (CLK), BURST mode (MODE) and SLEEP mode (ZZ).

Burst operations can be initiated with either the address status processor ( ADSP ) or address status controller ( ADSC ) input pin. Subsequent burst sequence burst addresses can be internally generated by the A63P7336 and controlled by the burst advance ( ADV ) pin. Write cycles are internally self-timed and synchronous with the rising edge of the clock (CLK).

This feature simplifies the write interface. Individual Byte enables allow individual bytes to be written. BW1 controls I/O1 - I/O9, BW2 controls I/O10 - I/O18, BW3 controls I/O19 - I/O27, and BW4 controls I/O28 - I/O36, all on the condition thatBWE is LOW. GW LOW causes all bytes to be written.

A63L83361 Maximum Ratings

Power Supply Voltage (VCC) . . . . . . .-0.5V to +4.6V
Voltage Relative to GND for any Pin Except VCC (Vin,
Vout) . . . . . . . . . . . . . . . . . . . . . -0.5V to VCC +0.5V
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . .. 2W
Storage Temperature (Tbias) . . . .. -65°C to 150 °C
Storage Temperature (Tstg) . . . . . . -55°C to 125°C

A63L83361 Features

·Fast access times: 6.5/7.5/8.0 ns(153/133/117 MHz)
·Single 3.3V±5% power supply
·Synchronous burst function
·Individual Byte Write control and Global Write
·Three separate chip enables allow wide range of options for CE control, address pipelining
·Selectable BURST mode
·SLEEP mode (ZZ pin) provided
·Available in 100-pin LQFP package
·Industrial operating temperature range: -45°C to +125°C for -I series

A63L83361 Connection Diagram

A63L83361  Connection Diagram

A63L83361 datasheet

A63L83361
PDF/DataSheet Download

Find A63L83361 Suppliers

  • ·A6300
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300 Datasheet Download
  • ·A6300AADL8A
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300AADL8A Datasheet Download
  • ·A6300AASO8A
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300AASO8A Datasheet Download
  • ·A6300AASO8B
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300AASO8B Datasheet Download
  • ·A6300ABDL8A
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300ABDL8A Datasheet Download
  • ·A6300ABSO8A
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300ABSO8A Datasheet Download
  • ·A6300ABSO8B
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300ABSO8B Datasheet Download
  • ·A6300ACDL8A
  • ETC [ETC] 
  • High Efficiency Linear Power Supply 
  • 201195 KB
  • A6300ACDL8A Datasheet Download

A63L83361 Relative Products

  • A63L8336

    A63L8336

    The A63L8336 is a high-speed SRAM containing 9M bits of bit synchronous memory, organized as 256K words by 36 bits. The A63L8336 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output registers and a 256KX36 SRAM co...

  • A63L73361

    A63L73361

    The A63L73361 is a high-speed SRAM containing 4.5M bits of bit synchronous memory, organized as 128K words by 36 bits. The A63L73361 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output buffer and a 128K X 36 SRA...

  • A63L7336

    A63L7336

    The A63L7336 is a high-speed SRAM containing 4.5M bits of bit synchronous memory, organized as 128K words by 36 bits. The A63L7336 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output registers and a 128KX36 SRAM ...

  • A63L73321

    A63L73321

    The A63L73321 is a high-speed, low-power SRAM containing 4,194,304 bits of bit synchronous memory, organized as 131,072 words by 32 bits. The A63L73321 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output buffer ...

  • A63L7332

    A63L7332

    The A63L7332 is a high-speed, low-power SRAM containing 4,194,304 bits of bit synchronous memory, organized as 131,072 words by 32 bits. The A63L7332 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output registers ...

  • A63L06361

    A63L06361

    The A63L06361 is a high-speed SRAM containing 36M bits of bit synchronous memory, organized as 1024K words by 36 bits.The A63L06361 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output buffer and a 1M X 36 SRAM cor...

Hotspot Suppliers Product

  • Models: 6DI30AH-050
Price: 1-2 USD

    6DI30AH-050

    Price: 1-2 USD

    power transistor module, 1200 V, High DC Current Gain

  • Models: UC3854N
Price: 1.2-1.6 USD

    UC3854N

    Price: 1.2-1.6 USD

    High Power Factor Preregulator, DIP, 35V, 0.5A, 1W, Feed-Forward Line Regulation, Low Noise Sensit...

  • Models: DM114
Price: 0.01-1 USD

    DM114

    Price: 0.01-1 USD

    constant current driver, 0 to 7.0V, 25MHz, CMOS Compatible Input, SSOP16, 20 to 30mA, 1.08W

  • Models: LM64P839
Price: 0.1-1 USD

    LM64P839

    Price: 0.1-1 USD

    LM64P839, Optoelectronics, lcd module

  • Models: DS1250Y-70IND+
Price: 5-6 USD

    DS1250Y-70IND+

    Price: 5-6 USD

    194,304-bit, fully static, nonvolatile SRAM, DIP-32, -0.3V to +6.0V, Low-power CMOS, control circu...

  • Models: 7D75A-050EHR
Price: 1-1 USD

    7D75A-050EHR

    Price: 1-1 USD

    IGBT module, high Arm short circuit capability, high DC current gain, including free wheeling diode

  • Models: C1701C
Price: 1.5-2 USD

    C1701C

    Price: 1.5-2 USD

    C1701C, NEC, DIP

  • Models: MAX6328UR23-T
Price: 0.15-0.35 USD

    MAX6328UR23-T

    Price: 0.15-0.35 USD

    microprocessor (μP) supervisory circuit, SOT, -0.3V to +6V, 20mA, 174mW, Low Cost, No External Com...

  • Models: BLM18PG121
Price: 0.001-5 USD

    BLM18PG121

    Price: 0.001-5 USD

    on-board type, EMI suppression filter, smd, 100MHz, 120W, 2000mA, BLM18PG121

  • Models: MEE250-12DA
Price: 1-100 USD

    MEE250-12DA

    Price: 1-100 USD

    Epitaxial Diode Module, 1200V, MEE250-12DA, 260A, 550W

  • Models: LM211H
Price: 1-10 USD

    LM211H

    Price: 1-10 USD

    DIP, voltage comparator, 50 mA, ±30V, 300V, National Semiconductor, MOS circuit

  • Models: HY5DU121622DTP-J
Price: 2-3 USD

    HY5DU121622DTP-J

    Price: 2-3 USD

    DRAM, TSOP, -1.0~3.6V

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All