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AA022P2-00

Features: Single Bias Supply Operation (6 V)22 dBm Typical P1 dBOutput Power at 23 GHz14 dB Typical Small Signal Gain0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temperat...

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AA022P2-00: Features: Single Bias Supply Operation (6 V)22 dBm Typical P1 dBOutput Power at 23 GHz14 dB Typical Small Signal Gain0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL...

AA022P2-00 Data Sheet

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Part Number:
AA022P2-00
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Single Bias Supply Operation (6 V)
22 dBm Typical P1 dBOutput Power at 23 GHz
14 dB Typical Small Signal Gain
0.25 m Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 MT 2010



Specifications

Operating Temperature (T C)............-55°C to +90°C
Storage Temperature (TST )............-65°C to +150°C
Bias Voltage (V D)................................................7 VDC
Power In (PIN ).................................................19 dBm
Junction Temperature (T J)...............................175°C




Description

Alpha'Stwo-stage balanced K band GaAs MMIC powe amplifier AA022P2-00 has a typical P1 dBof 22 dBm with 13 dB associated gain guaranteed across frequency range21-C23 GHz.The chip uses Alpha's proven 0.2m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance.




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