Features: Single Bias Supply Operation (6 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOutput Power at 28 GHz0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temperat...
AA028P3-00: Features: Single Bias Supply Operation (6 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOutput Power at 28 GHz0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL...
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Features: 3 dB Noise Figure 18 dB Gain+9 dBm Output PowerRugged, Reliable PackageSingle Voltage Op...
Features: Surface Mount Package3 dB Noise Figure 17 dB Gain+7 dBm Output PowerSingle Voltage Opera...
Features: Single Bias Supply Operation (6 V)22 dBm Typical P1 dBOutput Powerat 28 GHz 13.5 dB Typi...
Single Bias Supply Operation (6 V)
19 dB Typical Small Signal Gain
16 dBm Typical P1 dBOutput Power at 28 GHz
0.25 m Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 MT 2010
Alpha's three-stage reactively-matched 27-31 G GaAs MMIC driver amplifier AA028P3-00 has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz.The chip uses Alpha's proven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.Designed for 27¨C31 GHz LMDS and digital radio bands.