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Description: The Radiation Hardened ACS11MS is a Triple 3-Input AND Gate. When all three inputs to one of the gates...


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ACS11MS General Description


The Radiation Hardened ACS11MS is a Triple 3-Input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW level on any input will cause the output for that gate to be LOW. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.

The ACS11MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant
power reduction and faster performance when compared to ALSTTL types.

ACS11MS Features

• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si)
- SEU Immunity. . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . .VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . .±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . 100A (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . .12ns (Max)

ACS11MS Typical Application

• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs

ACS11MS Connection Diagram

ACS11MS  Connection Diagram

ACS11MS datasheet

ACS11MS
PDF/DataSheet Download

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