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Part Number: ACS32MS

 

 

 

 

Description: The Radiation Hardened ACS32MS is a Quad 2-Input OR Gate. For each gate, a HIGH level on either A or B...


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ACS32MS General Description


The Radiation Hardened ACS32MS is a Quad 2-Input OR Gate. For each gate, a HIGH level on either A or B input results in a HIGH level on the Y output. A LOW level on both the A and B inputs results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.

The ACS32MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant
power reduction and faster performance when compared to ALSTTL types.

ACS32MS Features

• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 105 RAD (Si)
- SEU Immunity. . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . .VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . .±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . 100A (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . 12ns (Max)

ACS32MS Typical Application

• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs

ACS32MS Connection Diagram

ACS32MS  Connection Diagram

ACS32MS datasheet

ACS32MS
PDF/DataSheet Download

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