ADF9010

DVDD, RxVDD , AVDD to GND1 .................−0.3 V to +3.9 V
RxVDD, AVDD to DVDD .............................−0.3 V to +0.3 V
VP to GND1...............................................−0.3 V to +5.5 V
Digital I/O Voltage to GND1..............−0.3 V to V_DD + 0.3 V
Analog I/O Voltage to GND1...........−0.3 V to AV_DD + 0.3 V
Charge Pump Voltage to GND1..........−0.3 V to VP to GND1
REFIN, LOEXTP, LOEXTN to GND1......−0.3 V to V_DD + 0.3 V
LOEXTP to LOEXTN...............................................±320 mV
Operating Temperature Range Industrial (B Version).......−40 to +85
Storage Temperature Range...................−65 to +150
Maximum Junction Temperature...............................150
LCSP JA Thermal Impedance................................26/W
Reflow Soldering Peak Temperature....................260/W
Time at Peak Temperature......................................40 sec
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
This device is a high-performance RF integrated circuit with an ESD rating of <0.5 kV and is ESD sensitive. Proper precautions should be taken for handling and assembly.