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Part Number: ADG1209
Description: The ADG1208 and ADG1209 are monolithic, iCMOS analog multiplexers comprising eight s

Description: The ADG1208 and ADG1209 are monolithic, iCMOS analog multiplexers comprising eight s
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QINYUAN ELECTRONICS (HK) LIMITED
Contact: Mr.Steven Wang
Tel: 86-0755-83987685
Adddate: 2010-09-03
(153)
ATL (HK) ELECTRONIC CO.,LIMITED
Contact: Mr.Semon
Tel: 0086-0755-83554152
Adddate: 2010-09-03
(395)
PDF/DataSheet Download
Datasheet: ADG1209YCPZ-REEL
File Size: 456410 KB
Manufacturer: AD
Download : Click here to Download
The ADG1208 and ADG1209 are monolithic, iCMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG1208 switches one of eight inputs to a common output as determined by the 3-bit binary address lines A0, A1, and A2. The ADG1209 switches one of four differential inputs to a common differential output as determined by the 2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched off. When on, each channel conducts equally well in both directions and has an input signal range that extends to the supplies.
The iCMOS (industrial CMOS) modular manufacturing process combines high voltage CMOS (complementary metal-oxide semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.
The ultralow capacitance and exceptionally low charge injection of these multiplexers make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Figure 2 shows that there is minimum charge injection over the entire signal range of the device. iCMOS construction also ensures ultralow power dissipation, making the parts ideally suited for portable and battery powered instruments.
|
Parameter |
Rating |
|
VDD to VSS |
35 V |
|
VDD to GND |
−0.3 V to +25 V |
|
VSS to GND |
+0.3 V to −25 V |
|
Analog, Digital Inputs1 |
VSS − 0.3 V to VDD + 0.3 V or30 mA (whichever occurs first) |
|
Continuous Current, S or D |
30 mA |
|
Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle max) |
100 mA |
|
Operating Temperature Range |
|
|
Industrial (Y Version) |
–40°C to +125°C |
|
Storage Temperature |
–65°C to +150°C |
|
Junction Temperature |
150°C |
|
TSSOP, θJA, Thermal Impedance |
112°C/W |
|
LFCSP_VQ, θJA, Thermal Impedance |
30.4°C/W |
|
Reflow Soldering Peak |
260(+0/−5)°C |
|
Temperature (Pb-Free) |
