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ADG779

Features: 1.8 V to 5.5 V single supply 2.5 on resistance 0.75 on-resistance flatness −3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching timestON 20 nstOFF 6 ns Typical power consumption (<0.01 W) TTL/CMOS compatibleApplicationBattery-powered systemsCo...

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SeekIC No. : 004275223 Detail

ADG779: Features: 1.8 V to 5.5 V single supply 2.5 on resistance 0.75 on-resistance flatness −3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching timestON 20 nstOFF...

ADG779 Data Sheet

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Part Number:
ADG779
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

1.8 V to 5.5 V single supply
2.5 on resistance
0.75 on-resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead SC70 package
Fast switching times
tON 20 ns
tOFF 6 ns
Typical power consumption (<0.01 W)
TTL/CMOS compatible




Application

Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacements




Pinout

ADG779 Diagram

Connection Diagram




Specifications

Switch Type SPDT
# Channels 1
Ron (Ohms) 2.5Ohms
Id, Is (ON) 10pA
Bandwidth 200MHz
t ON 14ns
t OFF 3ns
Supply Voltage Single (+3V),Single (+5V)


Parameter Rating
VDD to GND
Analog, Digital Inputs1

Peak Current, S or D

Continuous Current, S or D
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
SC70 Package, Power Dissipation
JA Thermal Impedance
JC Thermal Impedance
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Reflow Soldering (Pb-free)
Peak Temperature
Time at Peak Temperature

−0.3 V to +7 V
−0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
100 mA (pulsed at 1 ms,
10% duty cycle max)
30 mA

−40°C to +85°C
−65°C to +150°C
150°C
315 mW
332°C/W
120°C/W

215°C
220°C

260 (+0/−5)°C
10 sec to 40 sec






Description

The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents.

The ADG779 operates from a single supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices, Inc.

Each switch of the ADG779 conducts equally well in both directions when on. The ADG779 exhibits break-before-make switching action.Because of the advanced submicron process, −3 dB bandwidth of greater than 200 MHz can be achieved.

The ADG779 is available in a 6-lead SC70 package.






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