DescriptionThe ADG779BKS is a monolithic CMOS SPDT (single-pole,double-throw) switch.This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents.Each switch of the ADG779BKS conducts equally well in b...
ADG779BKS: DescriptionThe ADG779BKS is a monolithic CMOS SPDT (single-pole,double-throw) switch.This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed...
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The ADG779BKS is a monolithic CMOS SPDT (single-pole,double-throw) switch.This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents.Each switch of the ADG779BKS conducts equally well in both directions when on. The ADG779BKS exhibits break-before-make switching action.
The absolute maximum ratings of the ADG779BKS can be summarized as:(1):the VDD to GND is 0.3 V to +7 V;(2):the analog, digital inputs is 0.3 V to VDD + 0.3 V or 30 mA,whichever occurs first;(3):the continuous current,S or D is 100mA;(4):the peak current,S or D is 30 mA(pulsed at 1 ms,10% duty cycle max); (5):the operating temperature range industrial is 40 to +85;(6):the storage temperature range is 65 to +150;(7):the junction temperature is +150;(8):the package,power dissipation is 315 mW;(9):the JA thermal impedance is 332/W;(10):the JC thermal impedance is 120/W;(11)the lead temperature,soldering vapor phase (60 sec) is +215;(12):the lead temperature,soldering infrared (15 sec) is +220.