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Part Number: ADM3485EARZ
Description: The ADM3485EARZ is one member of the ADM3485E series.The ADM3485E is a low power differential line tra...


Description: The ADM3485EARZ is one member of the ADM3485E series.The ADM3485E is a low power differential line tra...
The ADM3485EARZ is one member of the ADM3485E series.The ADM3485E is a low power differential line transceiver designed to operate using a single +3.3 V power supply. Low power consumption makes it ideal for power sensitive applications.It is suitable for communication on multipoint bus transmission lines.Internal protection against electrostatic discharge(ESD) and electrical fast transient (EFT) allows operation in electrically harsh environments.
Features of the ADM3485EARZ are:(1)operates with +3.3 V supply; (2)ESD protection: 8 kV meets IEC1000-4-2; (3)EFT protection: 2 kV meets IEC1000-4-4; (4)EIA RS-422 and RS-485 compliant over full CM range; (5)19 k input impedance; (6)up to 50 transceivers on bus; (7)20 Mbps data rate; (8)short circuit protection; (9)specified over full temperature range; (10)thermal shutdown; (11)interoperable with 5 V logic; (12)1 mA supply current; (13)2 nA shutdown current; (14)8 ns skew.Excessive power dissipation caused by bus contention or by output shorting is prevented by a thermal shutdown circuit.This feature forces the driver output into a high impedance state if, during fault conditions, a significant temperature increase is detected in the internal driver circuitry.
The absolute maximum ratings of the ADM3485EARZ can be summarized as:(1)Vcc:+7V;(2)power dissipation 8-lead DIP:800 mW;(3)operating temperature range:-40 to +85;(4)storage temperature range:65 to +150;(5)lead temperature:300.Stresses above those listed under"absolute maximum ratings"may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.Although very little energy is contained within an ESD pulse,the extremely fast rise time, coupled with high voltages, can cause failures in unprotected semiconductors. Catastrophic destruction can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation, which may result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure.
ADM1014
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