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Description: The ADM483EANZ is one member of the ADM483E series.The ADM483E is a robust, low power differential lin...


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ADM483EANZ General Description


The ADM483EANZ is one member of the ADM483E series.The ADM483E is a robust, low power differential line transceiver suitable for communication on multipoint bus transmission lines.Internal protection against electrostatic discharge (ESD), electrical fast transient (EFT) and electromagnetic immunity (EMI) allows operation in electrically harsh environments.ESD protection on the I-O lines meets ±15 kV when tested using the Human Body Model.

Features of the ADM483EANZ are:(1)robust RS-485 transceiver; (2)15 kV ESD protection using HBM; (3)2 kV EFT protection meets IEC1000-4-4; (4)high EM immunity meets IEC1000-4-3; (5)reduced slew rate for Low EM interference; (6)250 kbps data rate; (7)single +5 V±10% supply; (8)7 V to +12 V bus common-mode range; (9)12 k input impedance; (10)short circuit protection; (11)excellent noise immunity; (12)36 A supply current; (13)0.1 A shutdown current.The level of unwanted emissions is also carefully controlled using slew limiting on the driver outputs.This reduces reflections with improperly terminated cables and also minimizes electromagnetic interference.The controlled slew rate limits the data rate to 250 kbps.

The absolute maximum ratings of the ADM483EANZ can be summarized as:(1)Vcc:+7V;(2)EMI immunity:10 V/m;(3)operating temperature range:-40 to +85;(4)storage temperature range:65 to +150;(5)lead temperature:300.Stresses above those listed under"absolute maximum ratings"may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.Although very little energy is contained within an ESD pulse,the extremely fast rise time, coupled with high voltages, can cause failures in unprotected semiconductors. Catastrophic destruction can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation, which may result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure.

ADM483EANZ datasheet

ADM1014
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