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Part Number: ADS8616A8A
Description: The ADS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks,Synchr...


Description: The ADS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks,Synchr...
The ADS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks,Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN,Vout |
-0.3 ~VDD+0.3 |
V |
| Voltage on VDD supply relative to Vss |
VDD,VDDQ |
-0.3 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
1 |
W |
| Short circuit current |
IOUT |
50 |
mA |
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
ADS8616A8A-75
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