AEPX65

The AEPX65 is designed as silicon photodetector which is offered in a range of small active sized suitable for high frequency fibre optic applications. These photodetectors take advantage of an epitaxial structure to achieve good high frequency response at operating voltages as low as 5 volts. The AEPX65 detectors may also be operated at higher bias levels up to 20 volts to achieve extremely fast pulsed response.

Some absolute maximum ratings of AEPX65 have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 30V. The second one is about its peak current (1us, 1% duty cycle) which would be 200mA. The third one is about its peak DC current which would be 10mA. The fourth one is about its storage temperature range which would be from -55°C to +125°C. The fifth one is about its operating temperature range which would be from -55°C to +120°C. The sixth one is about its soldering temperature range which would be 200°C.

Also some electrical / optical specifications of AEPX65(measured at 22°C ambient and a reverse of 5V unless otherwise stated) about it. The first one is about its active area which would be 0.63mm2 and 0.9mm dia. The second one is responsivity which would be min 0.3A/W and typ 0.37A/W. The third one is about its dark current which would be max 10nA and typ 2nA. The fourth one is about its NEP which would be 6.8 x 10^-14 WHz. The fifth one is about its capacitance which would be max 5pF at Vr=5V and max 5pF at Vr=20V. The sixth one is about its rise time which would be 2.4ns for VR=5V and 1.0ns for VR=20V. The seventh one is about its package which would be 2A. And so on. If you have any question or suggestion or want to know more information about AEPX65, please contact us.