AF002C1-39

This group of GaAs control FETs can be used in both series and shunt configurations.They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 W. These features make the device ideal replacements for PIN diodes, where low DC drain is critical.

Isolation performance degrades at higher frequencies due to package parasitics. They can be tuned out in narrow band applications as shown in the circuit examples on the following pages.