AF4362N

Features:

- Simple Drive Requirement
- Low On-resistance
- Fast Switching


Pinout




Specifications

Symbol	Parameter		Rating	Units
VDS	Drain-Source Voltage		30	V
VGS	Gate-Source Voltage		±12	V
ID	Continuous Drain Current (Note 1)	TA=25ºC	18	A
		TA=70ºC	15
IDM	Pulsed Drain Current (Note 2)		80	A
IS	Continuous Source Current (Diode Conduction) (Note 1)		2.5	A
PD	Power Dissipation (Note 1)	TA=25ºC	0.22	W
TJ	Storage Temperature Range		-55 to 150	ºC
TSTG	Operating Junction Temperature Range		-55 to 150	ºC

Description

The AF4362N advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as AF4362N DC/DC converters.