AF4835P

Features:

- Simple Drive Requirement
- Low On-resistance
- Fast Switching


Pinout




Specifications

Symbol	Parameter		Rating	Units
VDS	Drain-Source Voltage		-30	V
VGS	Gate-Source Voltage		±20	V
ID	Continuous Drain Current (Note 1)	TA=25ºC	-8	A
		TA=100ºC	-6
IDM	Pulsed Drain Current (Note 2)		-50	A
IS	Continuous Source Current (Diode Conduction) (Note 1)		2.5	A
PD	Total Power Dissipation	TA=25ºC	0.02	W
	Linear Derating Factor
TJ	Storage Temperature Range		-55 to 150	ºC
TSTG	Operating Junction Temperature Range		-55 to 150	ºC

Description

The AF4835P advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.