AF9902M

Features:

- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product


Pinout




Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDS	Drain-Source Voltage		30	-30	V
VGS	Gate-Source Voltage		±12	±12	V
ID	Continuous Drain Current (Note 1)	TA=25ºC	4.3	03.3	A
		TA=70ºC	3.4	-2.6
IDM	Pulsed Drain Current (Note 2)		20	-20	A
PD	Total Power Dissipation	TA=25ºC	1.38		W
	Linear Derating Factor		0.01
TJ	Storage Temperature Range		-55 to 150		ºC
TSTG	Operating Junction Temperature Range		-55 to 150		ºC

Description

The AF9902M advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.