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Part Number: AGB3312

 

 

 

 

Description: The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applicatio...


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AGB3312 General Description


The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50 system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3312 requires a single +5 V supply, and typically consumes 0.4 Watts of power.

AGB3312 Maximum Ratings

PARAMETER MIN MAX UNIT
Device Voltage (VCC) 0 +6 VDC
RF Input Power (PIN) - +10 dBm
Storage Temperature (TSTG) -40 +150 °C
Junction Temperature - +200 °C

AGB3312 Features

· On-chip Active Bias
· DC-7000 MHz Operation Bandwidth
· +42 dBm Output IP3 at 850 MHz
· 5 dB Noise Figure at 850 MHz
· 11 dB Gain
· +17 dBm P1dB
· SOT-89 Package
· Single +5 V Supply
· Case Temperature: -40 to +85 °C

AGB3312 Typical Application

· Cellular Base Stations for W-CDMA, CDMA,
  TDMA, GSM, PCS and CDPD systems
· Fixed Wireless
· MMDS/WLL
· WLAN

AGB3312 datasheet

AGB3312
PDF/DataSheet Download

Find AGB3312 Suppliers

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  • ·AGB3301S24Q1
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  • ·AGB3303
  • ANADIGICS [ANADIGICS, Inc] 
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  • AGB3303 Datasheet Download
  • ·AGB3303S24Q1
  • ANADIGICS [ANADIGICS, Inc] 
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