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Part Number: AGB3312
Description: The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applicatio...


Description: The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applicatio...
The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50 system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3312 requires a single +5 V supply, and typically consumes 0.4 Watts of power.
| PARAMETER | MIN | MAX | UNIT |
| Device Voltage (VCC) | 0 | +6 | VDC |
| RF Input Power (PIN) | - | +10 | dBm |
| Storage Temperature (TSTG) | -40 | +150 | °C |
| Junction Temperature | - | +200 | °C |
AGB3312
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