AM0912-300

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC100°C)	940	W
IC	Device Current*	24	A
VCC	Collector-Supply Voltage*	50	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM0912-300 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN.

The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.

AM0912-300 is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions.

The AM0912-300 is housed in the unique BIGPAC
] Hermetic Metal/Ceramic package with internal
Input/Output matching structures.