AM28F020A-200JC

The Am28F020A is a 2 Megabit Flash memory orga-nized as 256 Kbytes of 8 bits each. AMD's Flash mem-ories offer the most cost-effective and reliable read/write non-volatile random access memory. TheAm28F020A is packaged in 32-pin PDIP, PLCC, andTSOP versions. It is designed to be reprogrammed anderased in-system or in standard EPROM programmers.The Am28F020A is erased when shipped fromthe factory.

The standard Am28F020A offers access times of asfast as 70 ns, allowing high speed microprocessors tooperate without wait states. To eliminate bus conten-tion, the device has separate chip enable (CE#) andoutput enable (OE#) controls.AMD's Flash memories augment EPROM functionalitywith in-circuit electrical erasure and programming. TheAm28F020A uses a command register to manage thisfunctionality. The command register allows for 100%TTL level control inputs and fixed power supply levelsduring erase and programming, while maintainingmaximum EPROM compatibility.

The Am28F020A is compatible with the AMDAm28F256A, Am28F512A, and Am28F010A Flashmemories. All devices in the Am28Fxxx family followthe JEDEC 32-pin pinout standard. In addition, alldevices within this family that offer Embedded Algo-rithms use the same command set. This offersdesigners the flexibility to retain the same device foot-
print and command set, at any density between256 Kbits and 2 Mbits.
AMD's Flash technology reliably stores memory con-tents even after 100,000 erase and program cycles.The AMD cell is designed to optimize the erase andprogramming mechanisms. In addition, the combina-tion of advanced tunneloxide processing and lowinternal electric fields for erase and programming oper-ations produces reliablecycling. The Am28F020A usesa 12.0±5% VPP supply input to perform the erase andprogramming functions.
The highest degree of latch-up protection is achievedwith AMD's proprietary non-epi process. Latch-up pro-tection is provided for stresses up to 100 mA onaddress and data pins from 1 V to V_CC +1 V.

AMD's Flash technology combines years of EPROMand EEPROM experience to produce the highest levelsof quality, reliability, and cost effectiveness. TheAm28F020A electrically erases all bits simultaneouslyusing Fowler-Nordheim tunneling. The bytes areprogrammed one byte at a time using the EPROMprogramming mechanism of hot electron injection.