AM2931-110 Selling Leads, Price trend, AM2931-110 DataSheet download, circuit diagram from SeekIC.com

Features: .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE ·POUT =105 W MIN. WITH 6.2 dB GAINPinoutSpecifications Symbol Parameter Value Unit PDISS Power Diss...

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SeekIC No. : 004282192 Detail

AM2931-110: Features: .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE ·POUT =105 W MI...

AM2931-110 Data Sheet

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Part Number:: AM2931-110
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

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15 Days

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Product Details

Description

Features:

.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.3:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
·P_OUT =105 W MIN. WITH 6.2 dB GAIN

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation^* (T_C100°C)	375	W
I_C	Device Current^*	12	A
V_CC	Collector-Supply Voltage^*	48	V
T_J	Junction Temperature (Pulsed RF Operation)	250
T_STG	Storage Temperature	65 to 200

Description

The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization,and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM2931-110 is supplied in the BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications.

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AM2931-110

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