AM29DS323DB110WMIN

The AM29DS323DB110WMIN is designed as one kind of 32 megabit, 1.8 volt-only flash memory device that is organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The device is available with an access time of 110 and 120 ns, and is offered in an 48-ball FBGA package.

Features of the AM29DS323DB110WMIN are:(1)Two devices available with different bank sizes;(2)Data can be continuously read from one bank while executing erase/program functions in other bank;(3)Top or bottom boot block;(4)Manufactured on 0.23 m process technology;(5)Compatible with JEDEC standards - Pinout and software compatible with single-power-supply flash standard;(6)Access time as fast 110 ns;(7)Program time: 13 s/word typical; with Accelerate function, 7 s/word typical;(8)Ultra low power consumption (typical values);(9)Temporary Sector Unprotect allows changing data in protected sectors in-system;(10)Acceleration (ACC) function provides accelerated program times.

The absolute maximum ratings of the AM29DS323DB110WMIN can be summarized as:(1)Storage Temperature Plastic Packages: 65°C to +150°C;(2)Ambient Temperature with Power Applied: 65°C to +125°C;(3)Voltage with Respect to Ground Vcc: 0.5 V to +2.5 V;(4)Output Short Circuit Current: 100 mA;(5)Voltage with Respect to Ground A9, OE#, and RESET#: -0.5 V to +11 V.

The electrical characteristics of AM29DS323DB110WMIN can be summarized as:(1)Voltage for Autoselect and Temporary Sector Unprotect: 9 to 11 V;(2)Voltage for WP#/ACC Sector Protect/Unprotect and Program Acceleration: 8.5 to 9.5 V;(3)Input High Voltage: 0.8 x VCC to VCC + 0.3 V;(4)Input Low Voltage: 0.5 to VCC x 0.2 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .