AM42-0039

Parameter                                 Absolute Maximum
Input Power                                      +23 dBm
V_DD                                                   +12 Volts
V_GG                                                    -3 Volts
V_DD - V_GG                                         12 Volts
I_DD                                                   1700 mA
Channel Temperature                -40°C to +85°C
Storage Temperature                 -65°C to +150°C
1. Exceeding any one or a combination of these limits may cause permanent damage.
2. Case Temperature (T_C) = +25°C.
3. Nominal bias is obtained by first connecting -2 volts to pin 5 (V_GG), followed by connecting +9 volts to pin 10 (V_DD). Note sequence. Adjust V_GG for a drain current of 1050 mA typical.
4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.
5. No dc supply voltage will appear at the RF ports.
6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports.
7. For optimum IP₃ performance, the V_DD bypass capacitors should be placed within 0.5 inches of the V_DD leads.

M/A-COM's AM42-0039 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package. The AM42-0039 employs a fully matched monolithic chip with internally decoupled Gate and Drain bias networks. The
AM42-0039 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications.

The AM42-0039 is designed for use as an output stage or driver amplifier for VSAT transmitter systems. This amplifier is monolithic and requires a minimum of external components.

M/A-COM's AM42-0039 is fabricated using a mature 0.5 micron GaAs MESFET process. The chip is fully passivated for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance
specifications.