AM52-0001

Features:

·  SOIC-8 Thermally Efficient Plastic Package
·  +30.8 dBm Typical Power Out
·  Greater than 50% Typical Power Added Efficiency
·  21 dB typical Power Gain
·  Flexible External Output Matching


Specifications

Parameter                                            Absolute Maximum
Input Power ²                                         +23 dBm
Operating Voltage ²                             V_DD = + 10 Volts
                                                             V_GG = - 6 Volts
Junction Temperature ³                         +150 °C
Storage Temperature                       -65 °C to +150 °C
Operating Temperature                   -40 °C to +85 °C
1. Exceeding any one or combination of these limits may cause permanent damage.
2. Ambient Temperature (T_A) = + 25°C
3. See temperature derating curve.


Description

M/A-COM's AM52-0001 is a GaAs power amplifier in a thermally efficient low cost SOIC-8 plastic package. The AM52 0001 is designed for high efficiency 1.2 W output power and 21 dB of associated gain in the 800-960 MHz frequency band. The AM52-0001 is unconditionally stable in both small and large signal operation. It features flexible biasing for improved dynamic range and off-chip matching for improved efficiency and flexibility.

The AM52-0001 is specifically designed for high efficiency final output power amplification in FM, GFSK and FSK type systems, such as AMPS, ETACS, NTACS, CT1, CDPD and ISM.

M/A-COM's AM52-0001 is fabricated using a mature 0.5 micron gate length GaAs MESFET power process. The process features full passivation for increased performance and reliability. The AM52-0001 can be used with standard automated SMT assembly equipment (See M/A-COM application note M558).