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AM83135-050

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 125°C) 312 W IC Device Current* 8.0 A VCC Collector-Supply Voltage* 48 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM83135...

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AM83135-050: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 125°C) 312 W IC Device Current* 8.0 A VCC Collector-Supply Voltage* 48 V TJ Junction Temperature...

AM83135-050 Data Sheet

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Part Number:
AM83135-050
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC 125°C) 312 W
IC Device Current* 8.0 A
VCC Collector-Supply Voltage* 48 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

AM83135-050 is characterized at 10 msec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures  and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure
high reliability and product consistency (including phase characteristics).

The AM83135-050 is supplied in the IMPACTM Hermetic Metal/Ceramic package with internal Input/ Output impedance matching circuitry, and is intended for military and other high reliability applications.




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