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AN9D

Features: High design flexibility • Easy circuit constant design because of setting resistance or capacitance to an arbitrary value. • Free setting of contacts between a substrate and GND wiring prevents from operation error to be caused by floating of substrate potential. • Us...

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SeekIC No. : 004285679 Detail

AN9D: Features: High design flexibility • Easy circuit constant design because of setting resistance or capacitance to an arbitrary value. • Free setting of contacts between a substrate and G...

AN9D Data Sheet

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Part Number:
AN9D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High design flexibility
   • Easy circuit constant design because of setting resistance or capacitance to an arbitrary value.
   • Free setting of contacts between a substrate and GND wiring prevents from operation error to be caused by
      floating of substrate potential.
   • Usable for multi power source because a resistor island potential can be set for each unit.
   • Builds in a lateral type PNP transistor of high reverse breakdown voltage between base and emitter, or a
      collector wall type NPN transistor of excellent saturation characteristics(AN9DA00, AN9DB00, AN9DF00)
Short development period
   • Due to a full automatic layout design, a sample is available in one month from a completion of a circuit
      diagram.
Applicable to a small quantity production item
   • Possible to develop a custom IC for small quantity production due to a low development cost.




Specifications

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current A TA=25°C ID 7.5 -6.6 A
TA=70°C 6 -5.3
Pulsed Drain Current B IDM 30 -30
Power Dissipation TA=25°C PD 2.5 2.5 W
TA=70°C 1.6 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C



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