ANSR2N7275

Features: • 5A, 200V, rDS(ON) = 0.500Ω• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM• Photo Current - 3nA Per-RAD(Si)/s Typically•...

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SeekIC No. : 004285731 Detail

ANSR2N7275: Features: • 5A, 200V, rDS(ON) = 0.500Ω• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typical...

floor Price/Ceiling Price

Part Number:
ANSR2N7275
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 5A, 200V, rDS(ON) = 0.500Ω
• Total Dose
   - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
   - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
   - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
   - 3nA Per-RAD(Si)/s Typically
• Neutron
   - Maintain Pre-RAD Specifications
   for 1E13 Neutrons/cm2
   - Usable to 1E14 Neutrons/cm2



Specifications

  JANSR2N7275 UNITS
Drain to Source Voltage
VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ)
VDGR
200
V
Continuous Drain Current
      TC = 25
      TC = 100
ID
ID
5
3
A
A
Pulsed Drain Current
IDM
15
A
Gate to Source Voltage
VGS
±20
V
Maximum Power Dissipation
       TC = 25
       TC = 100
PT
PT
25
10
W
W
Linear Derating Factor
0.20
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure)
IAS
15
A
Continuous Source Current (Body Diode)
IS
5
A
Pulsed Source Current (Body Diode)
ISM
15
A
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Lead Temperature (During Soldering)
TL
300
(Distance >0.063in (1.6mm) from Case, 10s Max)
      Weight (Typical)
1.0
g



Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs ANSR2N7275 of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This ANSR2N7275 is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMADOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil's home page:
http://www.semi.harris.com. Contact your local Intersil Sales Office for additional information.



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